By the combination of the heat-resistant filter and cooling system, clean process in high temperature and operation temperature 450 deg-C is available. The best for wafer process, optical memory disc and liquid crystal.
Excellent heat efficiency and temperature uniformity
The best for semiconductor wafers and glass substrate
Inert gas introduction available
Baking and curing for semiconductor wafers and glass substrate 
Oxygen concentration meter, signal tower, cold trap, emergency stop, water leaking
detector
| CLH series specifications |
|---|
| Cleaness | CLASS100(temperature stable time)
/ CLASS500(up and down temperature time) |
|---|
| Oxygen concentration | Less than 20 ppm |
|---|
| System control | Programmed controller |
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| Accuracy | ±0.1%FS±1digit |
|---|
| Recipes | 19 (30segment/recipe) |
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| Temperature control | Auto tuning PID control |
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Shelf plate
withstand load | 15kg/shelf |
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| Chamber pressure meter | 0~2kPa |
|---|
| Filter pressure meter | 0~1kPa |
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| Thermocouple | Type-K |
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| Exhaust port | 1B/ball value |
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| Safety feature | Electric leak breaker, heat protection, motor over-load protection,
control circuit breaker, cooling water flow meter |
|---|
| Accessories | 2 shelves (with shelf plates) |
|---|
| | CLH-21CD(Ⅲ) | CLH-21CDH(Ⅲ) | CLH-21CD(Ⅴ) |
|---|
| Method | Convection (side-flow) | Convection rear to front |
|---|
| Maximum temperature(*1) | 450 deg-C | 530 deg-C | 500 deg-C |
|---|
| Operation temperature(*1) | RT+70~450 deg-C | RT+70~530 deg-C | RT+70~500 deg-C |
|---|
| Temperature distribution(*2) | ±5(at 450)deg-C | ±8(at 530)deg-C | ±5(at 500)deg-C |
|---|
| Heat up time(*1) | Within 80 minutes (RT+70~450 deg-C) | Within 90 minutes (RT+70~530 deg-C) | Within 80 minutes (RT+70~500 deg-C) |
|---|
Cool down time
(Reference) | Within 90 minutes (450~100 deg-C) | Within 100 minutes (530~100 deg-C) | Within 90 minutes
(500~100 deg-C) |
|---|
| Filter | Heat-resistant HEPA filter |
|---|
| O2 concentration | 20ppm within 45 minutes (N2⋅150L/min introduce) |
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| Heater power | 33.6kW(at 200V) | 21kW(at 200V) |
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| Temperature recorder | 1 pen temperature recorder (control point) |
|---|
| Outside dimension(mm) | 1285(W)×2020(H)×1605(D) | 1180(W)×2110(H)×1670(D) |
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| Inside dimension(mm) | 670(W)×700(H)×500(D) | 700(W)×700(H)×500(D)(*3) |
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| Equipment weight | About 1050kg | About 1100kg |
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| Breaker capacity | AC 200V 150A 3 phases 50/60 Hz | AC 200V 75A 3 phases 50/60 Hz |
|---|
| | CLH-35CD(Ⅲ) | CLH-35CDH(Ⅲ) |
|---|
| Method | Convection (Side-flow) |
|---|
| Maximum temperature(*1) | 450 deg-C | 530 deg-C |
|---|
| Operation temperature(*1) | RT+70~450 deg-C | RT+70~530 deg-C |
|---|
| Temperature distribution(*2) | ±5 (at 450 ) deg-C | ±8 (at 530 ) deg-C |
|---|
| Heat up time (*1) | Within 70 minutes
(RT+70~450 deg-C) | Within 120 minutes
(RT+70~530 deg-C) |
|---|
| Cool down time (Reference) | Within 100 minutes
(450~100 deg-C) | Within 120 minutes
(530~100 deg-C) |
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| Filter | Heat-resistant HEPA filter |
|---|
| O2 concentration | Within 50 minutes (N2⋅250L/min introduce) |
|---|
| Heater power | 48.3kW(at 200V) |
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| Temperature recorder | 1 pen temperature recorder (control point) |
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| Outside dimension(mm) | 1285(W)×2080(H)×1775(D) |
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| Inside dimension(mm) | 670(W)×790(H)×670(D) |
|---|
| Equipment weight | 1250kg |
|---|
| Breaker capacity | AC 200V 175A 3 phases 50/60 Hz |
|---|
(*1) Heat-up available temperature is figures at control point in a heating chamber.
(*2) Valid dimension is two-thirds inside dimension.
(*3) Inside width is 700 mm, opening width is 630 mm. |